Radiation induced interface trap limited storage times in 10 micron cutoff wavelength (Hg,Cd)Te MIS capacitors

Dark storage times have been measured as a function of temperature for 10 micron cutoff wavelength (77K) p-type (Hg,Cd)Te/anodic oxide-ZnS MIS capacitors prior to and after Co 60 gamma irradiation to doses of 5x10/sup 5/ and 1x10/sup 6/ rad(Si). The radiation induced interface trap density near midgap for these doses was 8x10/sup 11/ and 1.6x10/sup 12//eV-cm/sup 2/ respectively. A decrease in the storage time compared to that measured prior to irradiation was observed for both doses. The decreased storage time is attributed to thermal generation through the radiation induced interface traps and to interface trap assisted tunneling. The radiation induced dark current responsible for the storage time degradation is 1.8x10/sup -4/ A/cm/sup 2/ at 50K after a dose of 1.x10/sup 6/ rad(Si)