Published March 15, 2009
| Version v1
Journal article
The origination of ill-defined layer in organic spin valves
- 1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)
- 2. School of Space Science and Applied Physics, Shandong University at Weihai, Weihai 264209 (China)
Description
The origination of ill-defined layer in organic spin valves was investigated by using atomic force microscopy (AFM) and Rutherford backscattering (RBS) analysis. It was found that conductive bulges of LSMO film and self-grown pinholes in Alq3 film other than Co inclusions could lead to the formation of ill-defined layer. The morphology of LSMO substrate had a strong influence on that of Alq3 film, LSMO/Alq3 and Alq3/Co interfaces. Moreover, Alq3 film with the thickness of 1-4 nm could be barriers which was explained by small active area and added insulated layer in organic magnetic tunnel junctions
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.12.052Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.12.052;
- PII
- S0169-4332(08)02516-6;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 255
- Journal Issue
- 11
- Journal Page Range
- p. 5682-5685
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40086976
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ATOMIC FORCE MICROSCOPY; FILMS; INTERFACES; LAYERS; MORPHOLOGY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPIN; SUBSTRATES; SUPERCONDUCTING JUNCTIONS; THICKNESS; TUNNEL EFFECT; VALVES
- Descriptors DEC
- ANGULAR MOMENTUM; CONTROL EQUIPMENT; DIMENSIONS; ELEMENTS; EQUIPMENT; FLOW REGULATORS; METALS; MICROSCOPY; PARTICLE PROPERTIES; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.