Ultra-fast silicon detectors (UFSD)

We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We have performed several beam tests with LGAD of different gain and report the measured timing resolution, comparing it with laser injection and simulations. For the 300 μm thick LGAD, the timing resolution measured at test beams is 120 ps while it is 57 ps for IR laser, in agreement with simulations using Weightfield2. For the development of thin sensors and their readout electronics, we focused on the understanding of the pulse shapes and point out the pivotal role the sensor capacitance plays.