Graphene based superconducting junctions as spin sources for spintronics
Description
Highlights: • A graphene-based FS junction can be used in spintronic devices to generate high spin-polarized currents and it can be treated as an alternative for half-metallic ferromagnets or non-graphene junctions. • We have found that spin polarization shows a clear difference between the specular Andreev reflection and the conventional Andreev reflection processes. Therefore, spin polarization can be used as a tool to discriminate between the specular and conventional Andreev reflections, which is very important from the physical point of view. • The highly spin-polarized current does not depend on potential barrier which is in opposite to normaljunctions. We investigate spin-polarized transport in graphene-based ferromagnet-superconductor junctions within the Blonder-Tinkham-Klapwijk formalism by using spin-polarized Dirac-Bogoliubov-de-Gennes equations. We consider superconductor in spin-singlet s-wave pairing state and ferromagnet is modeled by an exchange field with energy of . We have found that graphene-based junctions can be used to produce highly spin-polarized current in different situations. For example, if we design a junction with high and compared to order parameter of superconductor, then one can have a large spin-polarized current which is tunable in magnitude and sign by bias voltage and . Therefore graphene-based superconducting junction can be used in spintronic devices in alternative to conventional junctions or half-metallic ferromagnets. Also, we have found that the calculated spin polarization can be used as a tool to distinguish specular Andreev reflection (SAR ) from the conventional Andreev reflection (CAR ) such that in the case of CAR, spin polarization in sub-gap region is completely negative which means that spin-down current is greater than spin-up current. When the SAR is dominated, the spin polarization is positive at all bias-voltages, which itself shows that spin-up current is greater than spin-down current.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physe.2017.09.010Additional details
Identifiers
- DOI
- 10.1016/j.physe.2017.09.010;
- PII
- S1386947717308548;
Publishing Information
- Journal Title
- Physica E. Low-Dimensional Systems and Nanostructures (Print)
- Journal Volume
- 96
- Journal Page Range
- p. 23-29
- ISSN
- 1386-9477
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54056314
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CURRENTS; GRAPHENE; S WAVES; SPIN; SPIN ORIENTATION; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTORS
- Descriptors DEC
- ANGULAR MOMENTUM; CARBON; ELEMENTS; NONMETALS; ORIENTATION; PARTIAL WAVES; PARTICLE PROPERTIES; TUNNEL JUNCTIONS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier B.V. All rights reserved.