Published May 2008 | Version v1
Journal article Metadata-only

m-plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE

Creators

  • 1. AIXTRON AG, Kackertstr. 15-17, 52072 Aachen (Germany)
  • 2. Chair of Electromagnetic Theory, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen (Germany)
  • 3. Department of Material Science and Opto-Electronic Engineering, National Sun Yat-Sen University (China)
  • 4. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Independence Ave, 68, Minsk 220072 (Belarus)
  • 5. PANalytical B.V., P.O. Box 13, 7600 AA Almelo (Netherlands)

Description

We present a study of growth and properties of m -plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A buffer structure, including an m-plane AlInN interlayer prior to GaN growth, has been developed. Quantum well structures on top of this buffer showed absence of polarization-induced electric fields verified by room temperature photoluminescence (RT PL) measurements with different excitation intensities. Different samples with peak emission wavelength between 433 nm and 495 nm exhibited stable peak position even for high excitation intensities of 500 kW/cm2. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200778565

Additional details

Identifiers

DOI
10.1002/pssb.200778565;

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
245
Journal Issue
5
Journal Page Range
p. 893-895
ISSN
0370-1972
CODEN
PSSBBD

Conference

Title
7. international conference of nitride semiconductors (ICNS-7)
Dates
16-21 Sep 2007
Place
Las Vegas, NV (United States)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39059993
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINATES; ALUMINIUM NITRIDES; ELECTRIC FIELDS; EMISSION SPECTRA; ENERGY SPECTRA; GALLIUM NITRIDES; INDIUM NITRIDES; LAYERS; LITHIUM COMPOUNDS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; VAPOR PHASE EPITAXY; VISIBLE SPECTRA; X-RAY DIFFRACTION
Descriptors DEC
ALKALI METAL COMPOUNDS; ALUMINIUM COMPOUNDS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXYGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SCATTERING; SPECTRA; TEMPERATURE RANGE

Optional Information

Notes
With 5 figs., 11 refs.. SICI: 0370-1972(200805)245:5<893::AID-PSSB200778565>3.0.TX;2-N