The analysis of Rutherford scattering-channelling measurements of disorder production and annealing in ion irradiated semiconductors

Rutherford scattering and channelling of light probe ions (e.g. He+) has been extensively used for studies of disorder production in ion implanted semiconductors. Various authors have analysed models of amorphousness accumulation and Carter and Webb have indicated the general difficulties in assessing disorder production models from RBS/channelling studies if the production modes are complex and the manner in which the technique responds to different defect structures is unspecified. For less complex disorder production modes and by making reasonable assumptions about the technique response however, some insight into the form of backscattering yield - ion implant fluence functions can be obtained as is discussed in the present communication. It thus becomes possible to infer the importance of different disorder generation processes from RBS/channelling - ion influence studies. It will also be shown how simple annealing processes modify disorder accumulation and thus again how the operation of such processes may be inferred from RBS/channelling - ion fluence measurements. (author)