Published 1989 | Version v1
Book

Properties of BiSrCaCuO films prepared by rf triode sputtering

  • 1. Ford Motor Co., Dearborn, MI (USA)
  • 2. Dept. of Electrical Engineering, Michigan State Univ., East Lansing, MI (USA)
  • 3. Dept. of Physics, Wayne State Univ., Detroit, MI (USA)
  • 4. Aeronutronic Div., Ford Aerospace Corp., Newport Beach, CA (USA)

Description

This paper reports films of BiSrCaCuO deposited on MgO, ZrO2, Si, SiO2, and sapphire by rf triode sputtering from a single target made by hot-pressing an unreacted power mixture of Bi2O3, SrCO3, CaO, and CuO. After a two-step post-growth anneal, films of Bi4Sr3Ca3Cu4O16 on (100) MgO are highly oriented with the c-axis perpendicular to the substrate. These films attain zero resistance at 83 K and have critical current densities of x x 105 A/cm2 at 65 K

Additional details

Publishing Information

Publisher
Elsevier Science Pub. Co., Inc.
Imprint Place
New York, NY (USA)
Imprint Title
Proceedings of the international conference on materials and mechanisms of superconductivity. High temperature superconductors II. Part 1-2
Imprint Pagination
1744 p.
Journal Page Range
p. 649-650.

Conference

Title
International conference on materials and mechanisms of superconductivity - high-temperature superconductors II.
Dates
23-28 Jul 1989.
Place
Stanford, CA (USA).

Optional Information

Secondary number(s)
CONF-890718--.