Analysis of the accumulation of radiation damage in selected crystals
- 1. Andrzej Soltan Institute for Nuclear Studies, Swierk/Otwock (Poland)
- 2. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warszawa (Poland)
- 3. Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse CNRS-IN2P3, Universite Paris-Sud, Orsay (France)
- 4. Laboratoire des Millieux Nanometriques, Universite d'Evry-Val d'Essonne, Evry (France)
- 5. Institute of Ion Beam Physics and Material Studies, Forschungszentrum Dresden, Dresden (Germany)
Description
Damage accumulation in SiC and MgAl2O4 was interpreted in the framework of the multi step damage accumulation (MSDA) model. The concept is based on the assumption that damage build-ups occur in several stages, each step being triggered by the destabilization of the current structural organization of the material. The analysis of the damaging process may thus be regarded as an identification of the current structure at each subsequent step of the damage build-up and of the forces leading to the destabilization of current structure. The analysis of mechanical properties provides a useful tool for this purpose by allowing the recognition of the mechanisms of phase transformations and helping to clarify the detailed structures of irradiated materials
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2008.03.136Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2008.03.136;
- PII
- S0168-583X(08)00411-4;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 266
- Journal Issue
- 12-13
- Journal Page Range
- p. 2902-2905
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 14. international conference on radiation effects in insulators
- Acronym
- REI-14
- Dates
- 28 Aug - 1 Sep 2007
- Place
- Caen (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40011872
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BUILDUP; CRYSTALS; DAMAGE; DEFECTS; IONS; IRRADIATION; MECHANICAL PROPERTIES; PHASE TRANSFORMATIONS; RADIATION EFFECTS; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.