Published May 26, 2014
| Version v1
Journal article
Direct detection of spontaneous polarization in wurtzite GaAs nanowires
Creators
- 1. Institut für Experimentelle und Angewandte Physik, Universität Regensburg (Germany)
Description
We demonstrate the direct detection of spontaneous polarization in the wurtzite crystal phase of gallium-arsenide (GaAs) nanowires. Using differential phase contrast microscopy (DPC) in a scanning transmission electron microscope, we map the differences in charge distribution between the zinc-blende and wurtzite crystal phases and use twin defects in the zinc-blende phase to quantify the polarization strength. The value of 2.7 × 10−3 C/m2 found for the polarization strength matches well with theoretical predictions.
Additional details
Identifiers
- DOI
- 10.1063/1.4880209;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 21
- Journal Page Range
- p. 211902-211902.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46006339
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CHARGE DISTRIBUTION; CRYSTAL DEFECTS; CRYSTALS; DETECTION; FORECASTING; GALLIUM ARSENIDES; NANOWIRES; POLARIZATION; QUANTUM WIRES; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; INORGANIC PHOSPHORS; MICROSCOPY; NANOSTRUCTURES; PHOSPHORS; PNICTIDES; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC