Methodology of prediction of the destructive effects due to the natural radiation environment on power MOSFETs and IGBTs
Creators
- Luu, Aurore
- Universite Toulouse III - Paul Sabatier, Laboratoire d'Analyse et d'Architecture des Systemes - LAAS-CNRS, Groupe Integration de Systemes pour la Gestion de l'Energie - ISGE, 7, avenue du Colonel Roche, 31077 Toulouse Cedex 4 (France)
- Centre de recherche EADS Innovation Works - IW, Suresnes (France)
Description
These works define a new methodology for the characterisation and prediction of the sensitivity of power devices type VDMOS to the natural radiation environment. This methodology is based on laser tests on one hand and on the development of a prediction software named MC DASIE on the other. The method of characterisation of power MOSFETs with laser testing is validated through the comparison of the results obtained with particle accelerators. Furthermore, laser mapping of the sensitivity is presented and the advantage of using the laser as a complementary tool of accelerators is highlighted. The development of an extension of the MC DASIE prediction software to power MOSFETs allows one to predict their sensitivity in an atmospheric environment. To this end, TCAD simulations are achieved; they allow for a better understanding of the Burnout phenomenon as well as the definitions of the triggering criteria and the volume of interaction. (author)
Abstract (French)
Ces travaux contribuent a definir une nouvelle methodologie de caracterisation et de prevision de la sensibilite des composants de puissance de type VDMOS vis a vis de l'environnement radiatif naturel. Cette methodologie est basee sur le test laser d'une part et sur le developpement d'un logiciel de prediction nomme MC DASIE d'autre part. La methode de caracterisation par laser de MOS de puissance est validee a partir de la comparaison des resultats obtenus avec des accelerateurs de particules. En outre, des cartographies laser de sensibilites sont presentees et l'interet du laser comme outil complementaire des accelerateurs est mis en lumiere. Le developpement d'une extension du logiciel de prediction MC DASIE aux MOS de puissance permet de predire leur sensibilite dans un environnement atmospherique. A cette fin, des simulations TCAD sont realisees; elles permettent une meilleure comprehension du phenomene de Burnout ainsi que la definition de criteres de declenchement et du volume d'interaction. (auteur)Files
49089304.pdf
Files
(4.1 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:9a97be59ac801cf7f8178bb500f04e4b
|
4.1 MB | Preview Download |
Additional details
Additional titles
- Original title (French)
- Methodologie de prediction des effets destructifs dus a l'environnement radiatif naturel sur les MOSFETs et IGBTs de puissance
Publishing Information
- Imprint Pagination
- 179 p.
- Report number
- FRNC-TH--10206
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 49089304
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- BUILDUP; COMPUTERIZED SIMULATION; COSMIC RADIATION; CROSS SECTIONS; HEAVY IONS; IONIZATION; LASERS; MONTE CARLO METHOD; MOSFET; NEUTRONS; PARTICLE TRACKS; PENETRATION DEPTH; PHOTOELECTRIC EFFECT; PHYSICAL RADIATION EFFECTS; PROTONS; SILICON; SOLAR RADIATION; SOLAR WIND; STOPPING POWER
- Descriptors DEC
- BARYONS; CALCULATION METHODS; CHARGED PARTICLES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FIELD EFFECT TRANSISTORS; HADRONS; IONIZING RADIATIONS; IONS; MOS TRANSISTORS; NUCLEONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; SIMULATION; SOLAR ACTIVITY; STELLAR ACTIVITY; STELLAR RADIATION; STELLAR WINDS; TRANSISTORS
Optional Information
- Notes
- 89 refs.; Available from the INIS Liaison Officer for France, see the INIS website for current contact and E-mail addresses