Published October 10, 2005 | Version v1
Journal article Metadata-only

High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

Creators

  • 1. Department of Physics, University of California, Riverside, California 92521 (United States)
  • 2. Quantum Structures Laboratory, Department of Electrical Engineering, University of California, Riverside, California 92521 (United States)

Description

Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A deg. X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2 Ω cm, high hole concentration of 1.7x1018 cm-3 and high mobility of 20.0 cm2/V s. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication

Additional details

Identifiers

DOI
10.1063/1.2089183;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
87
Journal Issue
15
Journal Page Range
p. 152101-152101.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37024185
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONY; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON-RESONANCE; EV RANGE 01-10; EXCITONS; FABRICATION; FILMS; HALL EFFECT; HOLE MOBILITY; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0273-0400 K; VALENCE; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; CYCLOTRON RESONANCE; ELECTRICAL PROPERTIES; ELEMENTS; EMISSION; ENERGY RANGE; EPITAXY; EV RANGE; LUMINESCENCE; MATERIALS; METALS; MOBILITY; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; QUASI PARTICLES; RESONANCE; TEMPERATURE RANGE; ZINC COMPOUNDS

Optional Information

Notes
(c) 2005 American Institute of Physics