Published April 10, 2007
| Version v1
Journal article
Plasma-assisted MBE growth of nitride-based intersubband detectors
Creators
- 1. Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)
- 2. University of Neuchatel, 2000 Neuchatel (Switzerland)
Description
In this work, we present the plasma-assisted molecular-beam epitaxy of quantum well infrared photodetector structures, including the Si-doped GaN/AlN short-period superlattice of the active region, AlGaN claddings and integration of the final device. Photovoltage measurements of complete devices reveal a narrow (∼90 meV) detection peak at 1.39 μm at room temperature
Additional details
Identifiers
- DOI
- 10.1063/1.2729975;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 893
- Journal Issue
- 1
- Journal Page Range
- p. 481-482
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 28. international conference on the physics of semiconductors
- Acronym
- ICPS 2006
- Dates
- 24-28 Jul 2006
- Place
- Vienna (Austria)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39072057
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM NITRIDES; CLADDING; CRYSTAL GROWTH; DOPED MATERIALS; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PLASMA; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUPERLATTICES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CRYSTAL GROWTH METHODS; DEPOSITION; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SURFACE COATING
Optional Information
- Notes
- (c) 2007 American Institute of Physics