Deposition of arsenide gallium films on silicon by pulsed ions ablation and their properties

Advanced direction in electronics is conjunction A^IIIB^V compounds, obtained uncial optical and electrical properties, with silicon as an effective and low-price substrate. Problems of growth of the polar semiconductor on the nonpolar substrate were decided partly and this fact stimulates the search of new methods of producing structures GaAs on Si. Pulsed methods of deposition of films obtain advantages compare with traditional ones. Deposition GaAs from plasma created by power ions beams not yields the pas in growth velocity and quality to films sintered by pulsed methods. Properties of films deposited by pulsed ions ablation were studied insufficiently. In work the optical, electrical and photoelectric properties of films GaAs, deposited on polycrystalline silicon from plasma formed by ions beam were investigated. The effect of thermal annealing at P<=10^-2 Pa, T_an=300-900 K on the films characteristics was established. Films GaAs/Si characteristics in dependence from deposition conditions change in wide limits. The Si influence reflects on field, temperature, energetic, barrier and spectral characteristics of the structure Ag/GaAs/Si. Annealing change properties of films owing to a change their stoichiometry, defects annihilation, its transformation into complexes and changes in morphology. Optimal properties were obtained after annealing at 300-800 K. (authors)