Published 1989
| Version v1
Journal article
Influence of the surface layer defects on the conduction mechanism in semi-insulating gallium arsenide
- 1. Universitat de Barcelona, Facultat de Fisica, Catedra d'Electronica, Barcelona (Spain)
- 2. Laboratoires d'Electronique et de Physique Appliquee (LEP), 94 - Limeil-Brevannes (France)
Description
The analysis of the leakage current transients on Cr-doped SI GaAs is presented. Samples with or without passivation of their surfaces have been considered. The results show the role played by the interfacial states as well as by the deep level centers located near the surface on the conduction mechanisms in the surface parallel transport. (author) 14 refs., 6 figs
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 38-41
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 1457-1461
- ISSN
- 0255-5476
- CODEN
- MSFOE
Conference
- Title
- 15. International conference on defects in semiconductors (ICDS-15).
- Dates
- 22-26 Aug 1988.
- Place
- Budapest (Hungary).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 20066790
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHROMIUM; CRYSTAL DEFECTS; CRYSTAL DOPING; GALLIUM ARSENIDES; INTERFACES; PASSIVATION; SURFACES; TRAPPING
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTS; GALLIUM COMPOUNDS; METALS; TRANSITION ELEMENTS