Published October 2018 | Version v1
Journal article

Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing

  • 1. State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027 (China)
  • 2. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

Description

Highlights: • Silicon nanocrystals (Si NCs) are used to fabricate optoelectronic synaptic devices. • Main functionalities of biological synapses are emulated by using broadband light. • The operation is basically governed by the electronic and optical behavior of Si NCs. Optically stimulated synaptic devices are critical to the development of neuromorphic computing with broad bandwidth and efficient interconnect. Although a few interesting materials have been employed to fabricate optically stimulated synaptic devices, the use of silicon (Si) that is the material of choice for very large-scale integration circuits in the conventional von Neumann computing has not been explored for optically stimulated synaptic devices. Here we take advantage of one of the most important nanostructures of Si — Si nanocrystals (NCs) to make synaptic devices, which can be effectively stimulated by light in the unprecedented broad spectral region from the ultraviolet to near-infrared, approaching the wavelength of ∼ 2 µm. These optically stimulated Si-NC-based synaptic devices demonstrate a series of important synaptic functionalities, well mimicking biological synapses. The plasticity of Si-NC-based synaptic devices originates from the dynamic trapping and release of photogenerated carriers at defects such as dangling bonds at the NC surface. The current facile use of Si NCs in broadband optoelectronic synaptic devices with low energy consumption has important implication for the large-scale deployment of Si in the emerging neuromorphic computing.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nanoen.2018.08.018

Additional details

Identifiers

DOI
10.1016/j.nanoen.2018.08.018;
PII
S2211285518305809;

Publishing Information

Journal Title
Nano Energy (Print)
Journal Volume
52
Journal Page Range
p. 422-430
ISSN
2211-2855

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52122715
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CARRIERS; ENERGY CONSUMPTION; EQUIPMENT; NANOCRYSTALS; NANOMATERIALS; PLASTICITY; SILICON; TRAPPING; ULTRAVIOLET RADIATION; WAVELENGTHS
Descriptors DEC
CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; MATERIALS; MECHANICAL PROPERTIES; NANOSTRUCTURES; RADIATIONS; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2018 Elsevier Ltd. All rights reserved.