Published 1995 | Version v1
Miscellaneous Open

Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces

Creators

  • 1. University Electro-Communications, Chofushi, Tokyo, (Japan)
  • 2. Sumitomo Electric Industries, Ltd., Yokohama, (Japan)
  • 3. Tokyo Univ. (Japan)

Description

Short communication

Files

28080527.pdf

Files (22.3 kB)

Name Size Download all
md5:60a13522e9e1cba5640022f651c9760a
22.3 kB Preview Download
Part of:
Ninth international conference on ion beam modification of materials. Book of abstracts

Additional details

Publishing Information

Publisher
Accademic Press.
Imprint Title
Ninth international conference on ion beam modification of materials. Book of abstracts
Imprint Pagination
452 p.
Journal Page Range
p. 15005.
Report number
INIS-AU--0004

Conference

Title
9. international conference on ion beam modification of materials.
Acronym
IBMM'95
Dates
5-10 Feb 1995.
Place
Canberra (Australia).

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
28080527
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ALUMINIUM ARSENIDES; ALUMINIUM IONS; ANNEALING; BORON IONS; DIFFUSION; DOSE-RESPONSE RELATIONSHIPS; ENERGY GAP; GALLIUM ARSENIDES; INDIUM COMPOUNDS; INTERFACES; ION IMPLANTATION; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SILICON IONS; TEMPERATURE DEPENDENCE; TIME DEPENDENCE
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; EMISSION; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; LUMINESCENCE; PHOTON EMISSION; PNICTIDES; RADIATION EFFECTS

Optional Information