Published October 1977
| Version v1
Journal article
Calculation of the profiles of implanted into silicon hydrogen ions of energy up to 100 keV
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Расчет профилей внедренных в кремний ионов водорода с энергией до 100 кев
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 11
- Journal Issue
- 10
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2005-2008
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 9412634
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANGULAR DISTRIBUTION; CRYSTAL DEFECTS; HYDROGEN IONS; ION IMPLANTATION; KEV RANGE 01-10; KEV RANGE 10-100; NUMERICAL SOLUTION; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.