Published December 1979
| Version v1
Journal article
Rotating plasma device, G-II device
- 1. Ibaraki Univ., Hitachi (Japan). Faculty of Engineering
Description
A rotating plasma device (G-II Device) was constructed for the study of multicomponent plasma under the influence of large acceleration. The experiments were performed for He at the initial pressure ranged from 0.01 to 0.1 Torr. The parameters of the rotating plasma are as follows: density n = 10sup(14 -- 15)/cc, temperature T sub(e) asymptotically equals T sub(i) = 5 x 10 eV, plasma rotation v sub(phi)/2πr asymptotically equals 105 r.p.s. and acceleration v sub(phi)sup(2)/r asymptotically equals 0.2 x 1010 m/sec2. (author)
Additional details
Publishing Information
- Journal Title
- Ibaraki Daigaku Kogakubu Kenkyu Shuho
- Journal Volume
- 27
- Series
- Ibaraki Daigaku Kogakubu Kenkyu Shuho.
- Journal Page Range
- 105-111
- ISSN
- 0367-7389
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 13649142
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ELECTROSTATIC PROBES; MAGNET COILS; MAGNETIC FIELDS; MAGNETIC PROBES; PLASMA; PLASMA DRIFT; ROTATION; SPECIFICATIONS; THERMONUCLEAR DEVICES; VACUUM SYSTEMS
- Descriptors DEC
- ELECTRIC COILS; ELECTRICAL EQUIPMENT; PROBES