Study of phosphorus evaporation during liquid-phase epitaxy of Insub(1-x)-Gasub(x)P solid solutions

The phosphorus vapor pressure has been studied above the melts of the In-InP-GaP system bounded by the Insub(0.9)(InP)sub(0.1)-Insub(0.9)(GaP)sub(0.1) section and a change in the melt composition due to phosphorus evaporation has been evaluated. The conditions have been determined which decrease phosphorus losses from the melt during liquid phase epitaxy of solid solutions of Insub(1-x)Gasub(x)P. In has been established that the growing of the epitaxial layers of Insub(1-x)Gasub(x)P is expedient at about 750 deg C. A strict correction of the melt composition is required, which is ensured by a decrease of phosphorus losses due to a reduction of the melt exposure time from the beginning of heating till the crystallization onset and to a decrease in the hydrogen flow rate. The optimum rate of the hydrogen flow is no less than 10 l/hr