Published October 10, 2014 | Version v1
Journal article Metadata-only

Charge offset stability in Si single electron devices with Al gates

Creators

  • 1. National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)
  • 2. ARC Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications The University of New South Wales, Sydney 2052 (Australia)

Description

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 e) is intermediate between that of Al/AlO x/Al tunnel junctions (greater than 1 e) and Si SEDs defined with Si gates (0.01 e). This range of values suggests that defects in the AlO x are the main cause of the charge offset drift instability. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/25/40/405201

Additional details

Identifiers

DOI
10.1088/0957-4484/25/40/405201;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
25
Journal Issue
40
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46082702
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ALUMINIUM; ALUMINIUM OXIDES; DEFECTS; DRIFT INSTABILITY; ELECTRONS; EQUIPMENT; SILICON; SUPERCONDUCTING JUNCTIONS
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; INSTABILITY; LEPTONS; METALS; OXIDES; OXYGEN COMPOUNDS; PLASMA INSTABILITY; PLASMA MICROINSTABILITIES; SEMIMETALS