Published March 2015
| Version v1
Journal article
Infrared thermal detector array using Eu(TTA)3-based temperature sensitive paint for optical readable thermal imaging device
- 1. Department of Bioengineering and Robotics, Tohoku University, Aoba 6-6-01, Aramaki, Aoba-ku, Sendai 980–8579 (Japan)
Description
This paper presents the design and fabrication of an infrared (IR) thermal detector array made of Eu(TTA)3-based temperature sensitive paint (TSP). The TSP emits 610 nm visible luminescence depending on temperature, and works as an IR-to-visible converter. An optical readout system was designed to excite and observe the detector array using a 355 nm light-emitting diode (LED) and a charge-coupled-device (CCD) camera, respectively. The temperature coefficient of the TSP was measured to be −1.58% K−1, and thermal images of a 400 °C object were successfully obtained. The noise analysis showed that the noise-equivalent temperature difference (NETD) of the imaging system was about 4.5 K. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0960-1317/25/3/035012Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering. Structures, Devices and Systems
- Journal Volume
- 25
- Journal Issue
- 3
- Journal Page Range
- [8 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47061539
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CAMERAS; CHARGE-COUPLED DEVICES; DESIGN; FABRICATION; IMAGES; INFRARED RADIATION; LIGHT EMITTING DIODES; LUMINESCENCE; NOISE; PAINTS; READOUT SYSTEMS; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- COATINGS; ELECTROMAGNETIC RADIATION; EMISSION; PHOTON EMISSION; RADIATIONS; REACTIVITY COEFFICIENTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE