Published April 1997
| Version v1
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The influence of technological regimes of the silicon solar cells production on the formation of radiation effects
- 1. AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki
Description
The efficiency of radiation defect formation in silicon solar cells was investigated depending on technological cycle of production of diffusive p-n junctions. it was shown that with the increasing of duration of formation of p-layers the degradation rate of solar cells characteristics increased. (author)
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Additional details
Additional titles
- Original title (Russian)
- Влияние технологических режимов изготовления кремниевых солнечных элементов на образование радиационных дефеcтов
Publishing Information
- Imprint Title
- Abstracts of the international scientific-practical conference on space research, technology and conversion-II
- Imprint Pagination
- 166 p.
- Journal Page Range
- p. 96-97
- Report number
- INIS-UZ--053
Conference
- Title
- International conference on space research, technology and conversion-II
- Dates
- 16-18 Apr 1997
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29053422
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; MEV RANGE; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION EFFECTS; SILICON; SILICON SOLAR CELLS
- Descriptors DEC
- BEAMS; DIRECT ENERGY CONVERTERS; ELEMENTS; ENERGY RANGE; EQUIPMENT; HEAT TREATMENTS; NUCLEON BEAMS; PARTICLE BEAMS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT
Optional Information
- Notes
- 1 tab. Imprint:Tezisy dokladov mezhdunarodnoj nauchno-prakticheskoj konferentsii: Kosmicheskie issledovaniya, tekhnologii i konversiya-II