Published April 1997 | Version v1
Miscellaneous Open

The influence of technological regimes of the silicon solar cells production on the formation of radiation effects

  • 1. AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki

Description

The efficiency of radiation defect formation in silicon solar cells was investigated depending on technological cycle of production of diffusive p-n junctions. it was shown that with the increasing of duration of formation of p-layers the degradation rate of solar cells characteristics increased. (author)

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Part of:
Abstracts of the international scientific-practical conference on space research, technology and conversion-II

Additional details

Additional titles

Original title (Russian)
Влияние технологических режимов изготовления кремниевых солнечных элементов на образование радиационных дефеcтов

Publishing Information

Imprint Title
Abstracts of the international scientific-practical conference on space research, technology and conversion-II
Imprint Pagination
166 p.
Journal Page Range
p. 96-97
Report number
INIS-UZ--053

Conference

Title
International conference on space research, technology and conversion-II
Dates
16-18 Apr 1997
Place
Tashkent (Uzbekistan)

Optional Information

Notes
1 tab. Imprint:Tezisy dokladov mezhdunarodnoj nauchno-prakticheskoj konferentsii: Kosmicheskie issledovaniya, tekhnologii i konversiya-II