Published November 22, 2016
| Version v1
Journal article
Linear and quadratic in temperature resistivity from holography
- 1. Shanghai Key Lab for Astrophysics,100 Guilin Road, 200234 Shanghai (China)
- 2. Shanghai Key Laboratory of High Temperature Superconductors,Shanghai 200444 (China)
- 3. Department of Physics, Shanghai University, Shanghai 200444 (China)
- 4. School of Physics, University of Chinese Academy of Sciences,Beijing, 100049 (China)
- 5. Department of Electrophysics, National Chiao Tung University,Hsinchu 300 (China)
Description
We present a new black hole solution in the asymptotic Lifshitz spacetime with a hyperscaling violating factor. A novel computational method is introduced to compute the DC thermoelectric conductivities analytically. We find that both the linear-T and quadratic-T contributions to the resistivity can be realized, indicating that a more detailed comparison with experimental phenomenology can be performed in this scenario.
Availability note (English)
Available from http://dx.doi.org/10.1007/JHEP11(2016)128; Available from http://repo.scoap3.org/record/18048Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of High Energy Physics (Online)
- Journal Volume
- 2016
- Journal Issue
- 11
- Journal Page Range
- p. 128
- ISSN
- 1029-8479
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48056692
- Subject category
- S72: PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; S79: ASTROPHYSICS, COSMOLOGY AND ASTRONOMY;
- Descriptors DEI
- ASYMPTOTIC SOLUTIONS; BLACK HOLES; ELECTRIC CONDUCTIVITY; HOLOGRAPHIC PRINCIPLE; SPACE-TIME; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELECTRICAL PROPERTIES; MATHEMATICAL SOLUTIONS; PHYSICAL PROPERTIES
Optional Information
- Copyright
- Copyright (c) OPEN ACCESS, © The Authors
- Notes
- PUBLISHER-ID: JHEP11(2016)128; ARXIV:1606.07905; OAI: oai:repo.scoap3.org:18048
- Funding organization
- SCOAP3, CERN, Geneva (Switzerland)