Published September 1992
| Version v1
Journal article
Progress of large area Si ΔE detector
- 1. Academia Sinica, Lanzhou, GS (China). Inst. of Modern Physics
Description
The si ΔE detectors with large area (154-313 mm2) have been fabricated by using electro-chemical etching method combined with conventional chemical etching for rising detection efficiency. The thickness range of the detectors is 18-30 μm. The active area of the detectors is about of four larger than ones fabricated by using conventional chemical etching method only. The energy loss resolution of 8.78 MeV α-particle is equal to 10-15%
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 12
- Journal Issue
- suppl.
- Series
- Proceedings of 6th national coference on nuclear electronics and nuclear detection technology (A).
- Journal Page Range
- p. 151, 184-186.
- ISSN
- 0258-0934
- CODEN
- HDYUEC
Conference
- Title
- 6. national conference on nuclear electronics and nuclear detection technology.
- Dates
- 21-26 Sep 1992.
- Place
- Weihai (China).
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 26011715
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALPHA SPECTRA; CORROSION; EFFICIENCY; ELECTRICAL PROPERTIES; ELECTROCHEMISTRY; ENERGY LOSSES; ENERGY RESOLUTION; EPITAXY; FABRICATION; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SPECTRA