Published August 29, 1988 | Version v1
Journal article

Oxygen diffusion into oxygen-deficient Ba2YCu3O/sub 7-//sub x/ films during plasma oxidation

  • 1. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan

Description

We studied the speed of oxygen diffusion into deoxygenated Ba2 YCu3 O/sub 7-//sub x/ films during plasma oxidation. The films were deoxygenated by annealing in N2 or Ar and treated in an oxygen plasma. The sample was below 160 0C during the plasma oxidation. The deoxygenated film was tetragonal and exhibited semiconductivity. Plasma oxidation changed the crystal structure of the film from tetragonal to orthorhombic, and restored superconductivity and metallic behavior in the oxygen deficient film. The change in composition variable x calculated from the weight gain during plasma oxidation was about 0.6. The effective diffusion constant for oxygen indiffusion estimated from the time dependence of weight gain was on the order of 10/sup -12/ cm2 /s

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
53
Journal Issue
9
Series
Appl. Phys. Lett.
Journal Page Range
811-813
ISSN
0003-6951
CODEN
APPLA