Published October 2010 | Version v1
Journal article

Multiscale three-dimensional simulations of charge gain and transport in diamond

  • 1. Tech-X Corporation, Boulder, Colorado 80303 (United States)
  • 2. Brookhaven National Laboratory, Upton, New York 11973 (United States)

Description

A promising new concept of a diamond-amplified photocathode for generation of high-current, high-brightness, and low thermal emittance electron beams was recently proposed and is currently under active development. Detailed understanding of physical processes with multiple energy and time scales is required to design reliable and efficient diamond-amplifier cathodes. We have implemented models, within the VORPAL computational framework, to simulate secondary electron generation and charge transport in diamond in order to facilitate the investigation of the relevant effects involved. The models include inelastic scattering of electrons and holes for generation of electron-hole pairs, elastic, phonon, and charge impurity scattering. We describe the integrated modeling capabilities we developed and present results on charge gain and collection efficiency as a function of primary electron energy and applied electric field. We compare simulation results with available experimental data. The simulations show an overall qualitative agreement with the observed charge gain from transmission mode experiments and have enabled better understanding of the collection efficiency measurements.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
108
Journal Issue
7
Journal Page Range
p. 073712-073712.14
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2010 American Institute of Physics