Published 2004
| Version v1
Journal article
Effect of implanted ion mass and incident energy on defect and ion depth-distributions in ion-implanted Si
Creators
- 1. National Inst. of Advanced Industrial Science and Technology AIST, Tsukuba, Ibaraki (Japan)
Description
Defect depth-profiling by positron annihilation Doppler broadening was performed for single crystalline silicon wafers implanted with B+, C+, P+, and As+ having various energies. The depth profile of defects produced by ion implantation was compared with that of implanted ions using their averaged depths, Rd and Rp. The ratio of Rd to Rp was found to vary systematically with dimensionless reduced energy proposed by Lindhard et al. [K. Dan. Vidensk. Selsk. Mat.-Fys. Medd. 36, 10 (1968).]. (orig.)
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 445-446
- Journal Page Range
- p. 108-110
- ISSN
- 0255-5476
- CODEN
- MSFOEP
Conference
- Title
- 13. International conference on positron annihilation - ICPA-13
- Dates
- Sep 2003
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 35050756
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNIHILATION; ARSENIC IONS; BORON IONS; CARBON IONS; CRYSTAL DEFECTS; DEPTH; DOPED MATERIALS; DOPPLER BROADENING; ENERGY DEPENDENCE; ION IMPLANTATION; KEV RANGE 10-100; KEV RANGE 100-1000; MONOCRYSTALS; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; POSITRON COLLISIONS; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHARGED PARTICLES; COLLISIONS; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; INTERACTIONS; IONS; KEV RANGE; LINE BROADENING; MATERIALS; PARTICLE INTERACTIONS; RADIATION EFFECTS; SEMIMETALS