Effects of electron bombardment on the shot noise of silicon junction transistors

The effects of 3 MEV electron bombardment on the shot noise properties of silicon junction transistors were studied. The noise figures of the transistors were greatly affected, especially at high source resistances, by the increase of the gene ration-recombination current in the emitter junction after electron bombardment. The results of noise figure measurements show good agreement with the noise figure equation which contains the generation-recombination factor me . A discrepancy between the expression of i21 derived by Schneider and Strutt and that by van der Ziel is illustrated and the effect of this discrepancy on the expressions for the noise figure is shown in this pape r.