The effect of rare earth Nd3+doping on physical characteristics of Cu2O thin films derived by electrodeposition technique

Highlights: • Fabrication of neodymium-doped copper oxide (Cu₂O) thin films by electrodeposition was done. • Structural, vibrational and elemental mappings confirm single phase of Cu₂O films. • Photoluminescence emission quenching associated to Nd doping was observed in Cu₂O films. • Band gap reduction from 2.04 to 1.89 eV with Nd doping in Cu₂O was observed. • Photoresponse of films is enhanced with increasing Nd doping and illumination intensity. -- Abstract: Undoped and rare earth Neodymium (Nd) doped cuprous oxide (Cu₂O) thin films were prepared by electrodeposition method. The prepared film's structural, morphological, optical and photosensitive properties were analyzed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, ultra violet-visible and I-V measurements. The fabricated Cu₂O:Nd films exhibited polycrystalline nature with cubic crystal system, and favorably grown along (111) orientation. Crystallite size was decreased from 56 nm to 30 nm with Nd concentrations. Raman spectrum confirmed the Cu₂O phase of the prepared films. The morphological analysis showed pyramidal shaped particles for the undoped Cu₂O thin film. The energy gap was reduced from 2.04 eV to 1.89 eV as Nd doping level was increased. From photoluminescence spectrum a high intense peak was observed at 619 nm which confirms the optical quality of Cu₂O phase. The dielectric constant was increased by increasing the Nd doping concentration from 0 to 5%. In photosensitivity analysis an increase of photo response with respect to illuminated current was observed.