Published January 2014
| Version v1
Journal article
Semiconductor diode characterization for total skin electron irradiation
Creators
Description
In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apradiso.2013.06.005Additional details
Identifiers
- DOI
- 10.1016/j.apradiso.2013.06.005;
- PII
- S0969-8043(13)00264-9;
Publishing Information
- Journal Title
- Applied Radiation and Isotopes
- Journal Volume
- 83
- Journal Issue
- Part C
- Journal Page Range
- p. 214-217
- ISSN
- 0969-8043
- CODEN
- ARISEF
Conference
- Title
- 13. international symposium; 23. national congress on solid state dosimetry
- Dates
- 15-19 Oct 2012
- Place
- Ocoyoacac (Mexico)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46032380
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CALIBRATION; CONTROL; DOSIMETRY; ELECTRON BEAMS; ELECTRONS; IN VIVO; IRRADIATION; MEV RANGE 01-10; SEMICONDUCTOR DIODES; THERAPY
- Descriptors DEC
- BEAMS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; LEPTON BEAMS; LEPTONS; MEDICINE; MEV RANGE; PARTICLE BEAMS; SEMICONDUCTOR DEVICES
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.