Published 1990
| Version v1
Miscellaneous
Study of surface layers in silicon implanted by low energy molybdenum ions
Description
Short note
Additional details
Additional titles
- Original title (Russian)
- Исследование поверхностных слоев кремния, имплантированных низкоэнергетичными ионами молибдена
Publishing Information
- Imprint Title
- Theses of reports of the 20. All-union conference on physics of charged particles interaction with crystals
- Imprint Pagination
- 170 p.
- Journal Page Range
- p. 117.
- Report number
- INIS-SU--220
Conference
- Title
- 20. All-union conference on physics of charged particles interaction with crystals.
- Dates
- 28-30 May 1990.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22022257
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- KEV RANGE 01-10; MOLYBDENUM IONS; PHASE STUDIES; PULSED IRRADIATION; RADIATION EFFECTS; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; IRRADIATION; KEV RANGE; SEMIMETALS
Optional Information
- Notes
- Imprint:Tezisy dokladov 20. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.