Published January 1, 1980
| Version v1
Journal article
Removal of radiation-induced electron traps in MOS structures by rf annealing
Creators
- 1. Yale University, Department of Engineering and Applied Science, New Haven, Connecticut 06520
Description
rf annealing technique has been successfully applied to remove the radiation-induced electron traps in MOS structures. The experimental details, including the annealing apparatus, sample fabrication and irradiation, sample measurements, and data analysis will be described. Some suggestions concerning the possible mechanisms involved in the annealing of neutral traps, in particular, the recombination-enhanced defect reactions, will be presented
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 36
- Journal Issue
- 1
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 81-84
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11521567
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; CRYSTALS; DATA; ELECTRONS; FABRICATION; PHYSICAL RADIATION EFFECTS; RECOMBINATION; TRAPS
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; FERMIONS; HEAT TREATMENTS; INFORMATION; LEPTONS; RADIATION EFFECTS