Temperature dependence of secondary electron emission as a new method of materials study

Analytical possibilities of the method of secondary electron emission (SEE) temperature dependence for the study of chemical and physical properties of materials are shown. The consideration of SEE temperature dependence permits to evaluate the depth of defect level position in forbidden area of semiconductors and dielectrics, as well as parameters of secondary electron interaction with the substance; to measure oxygen deficiency in oxide materials; to determine phase transitions, to identify oxidized layers of metals and alloys and to reduce regions of oxide minerals; to conduct phase analysis of heterophase superconducting ceramics