Published August 6, 1990
| Version v1
Journal article
Demonstration of the effects of interface strain on band offsets in lattice-matched III-V semiconductor superlattices
- 1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)
Description
A first principles total energy self-consistent pseudopotential calculation is used to predict the band offset in the lattice-matched superlattice InAs/Al0.8Ga0.2As0.14Sb0.86. We find that inclusion of interface strain changes the character of the band offset from nominally type II to strongly type II. The predicted band offset at the minimum energy configuration is in excellent agreement with the value determined from infrared photoluminescence measurements
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 57
- Journal Issue
- 6
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 578-580
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22008070
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; ANTIMONIDES; ELECTRONIC STRUCTURE; GALLIUM COMPOUNDS; INDIUM ARSENIDES; PIEZOELECTRICITY; SANDIA LABORATORIES; SUPERLATTICES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICITY; INDIUM COMPOUNDS; NATIONAL ORGANIZATIONS; PNICTIDES; SANDIA NATIONAL LABORATORIES; US AEC; US DOE; US ERDA; US ORGANIZATIONS