Finite element analysis and equivalent parallel-resistance model for conductive multilayer thin films
Creators
- 1. Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
Description
The standard collinear four-point probe method is an indispensable tool and has been extensively used for characterizing conductive thin films with homogeneous and isotropic electrical properties. In this paper, we conduct three-dimensional (3D) finite element simulations on conductive multilayer films to study the relationship between the reading of the four-point probe and the conductivity of the individual layers. We find that a multilayer film may be modeled as a simple equivalent circuit with multiple resistances, connected in parallel for a wide range of resistivity and thickness ratios, as long as its total thickness is smaller than approximately half of the probe spacing. As a result, we may determine the resistivity of each layer sequentially by applying the four-point probe, with the original correction factor π /ln(2), after deposition of each layer. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-0233/27/7/074006Additional details
Identifiers
Publishing Information
- Journal Title
- Measurement Science and Technology
- Journal Volume
- 27
- Journal Issue
- 7
- Journal Page Range
- [7 p.]
- ISSN
- 0957-0233
- CODEN
- MSTCEP
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49032318
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DEPOSITION; ELECTRICAL PROPERTIES; EQUIVALENT CIRCUITS; FINITE ELEMENT METHOD; LAYERS; PROBES; THICKNESS; THIN FILMS; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CALCULATION METHODS; DIMENSIONS; ELECTRONIC CIRCUITS; FILMS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; PHYSICAL PROPERTIES; SIMULATION