Published December 2016 | Version v1
Journal article Metadata-only

Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation

Creators

  • 1. Faculty of Physics, University of Tabriz, P.O. Box 51666-16471, Tabriz (Iran, Islamic Republic of)
  • 2. Department of Physics, Payame Noor University, Tehran (Iran, Islamic Republic of)

Description

This article is about the absorbed-dose-dependent threshold voltage shift of the MOSFET transistors. Performance of the MOSFETs has been tested in different gate voltages. Sensitivity of the transistors for 662 keV gamma ray is studied in 1-5 Gy dose range. It was found that for transistors irradiated in biased mode, significant changes in the threshold voltage occurred, and the sensitivity to gamma rays increased with the bias voltage. (authors)

Additional details

Identifiers

DOI
10.1007/s41365-016-0149-8;

Publishing Information

Journal Title
Nuclear Science and Techniques
Journal Volume
27
Journal Issue
6
Journal Page Range
[6 p.]
ISSN
1001-8042

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
52015881
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ABSORBED RADIATION DOSES; CESIUM 137; DOSIMETRY; ELECTRIC POTENTIAL; GAMMA RADIATION; IRRADIATION; KEV RANGE 100-1000; MOSFET; SENSITIVITY
Descriptors DEC
BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CESIUM ISOTOPES; DOSES; ELECTROMAGNETIC RADIATION; ENERGY RANGE; FIELD EFFECT TRANSISTORS; INTERMEDIATE MASS NUCLEI; IONIZING RADIATIONS; ISOTOPES; KEV RANGE; MOS TRANSISTORS; NUCLEI; ODD-EVEN NUCLEI; RADIATION DOSES; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; TRANSISTORS; YEARS LIVING RADIOISOTOPES

Optional Information

Notes
7 figs., 36 refs.; http://dx.doi.org/10.1007/s41365-016-0149-8