Published July 2014 | Version v1
Journal article

Electrically driven single photon emission from a CdSe/ZnSSe/MgS semiconductor quantum dot

  • 1. Werkstoffe der Elektrotechnik and CENIDE, Universitaet Duisburg-Essen, Bismarckstrasse 81, 47057 Duisburg (Germany)
  • 2. Institut fuer Festkoerperphysik, Universitaet Bremen, Otto-Hahn-Allee 1, 28334 Bremen (Germany)

Description

We demonstrate electrically driven single photon emission from a CdSe/ZnSSe/MgS single quantum dot embedded in a resonant cavity light emitting diode. Patterned Pd/Au top contacts are used to inject the charge carriers locally. Single quantum dot electroluminescence is obtained at T = 4 K from nanoapertures lithographically defined in the top contacts. At low current densities, antibunching with a value of g(2)(0) = 0.16 is achieved. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.201300627

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
11
Journal Issue
7-8
Journal Page Range
p. 1256-1259
ISSN
1610-1642

Conference

Title
16. International conference on II-VI compounds and related materials
Acronym
II-VI 2013
Dates
9-13 Sep 2013
Place
Nagahama (Japan)

Optional Information

Notes
With 3 figs., 25 refs.