Published January 1979
| Version v1
Journal article
Radiation-induced defects in n-silicon irradiated with alpha particles
- 1. Belorusskij Gosudarstvennyj Univ., Minsk. Inst. Prikladnykh Fizicheskikh Problem
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Радиационные дефекты в н-кремнии, облученном альфа-частицами
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 13
- Journal Issue
- 1
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 171-173
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 10492629
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ALPHA BEAMS; BORON ADDITIONS; CARRIER LIFETIME; LOW TEMPERATURE; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DOSES; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; HELIUM 4 BEAMS; ION BEAMS; LIFETIME; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Semiconductors (USA).