Published June 22, 2009 | Version v1
Journal article Metadata-only

Structural and electrical properties of thin SrHfON films for high-k gate dielectric

Creators

  • 1. State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072 (China)

Description

Thin SrHfON films were prepared by reactive cosputtering of Hf-O and Sr-O targets in Ar/N2 ambient environment. Structural and electrical properties of the as-deposited and annealed SrHfON films used as gate dielectrics have been investigated. The SrHfON films have crystallization temperature higher than 900 deg. C. After annealing at 900 deg. C, high dielectric constant of 19.3 and effective work function of 4.13 eV was obtained for the SrHfON films. It is worth mentioning that the leakage current density of Au/SrHfON/IL SiOx gate stack is two orders of magnitude lower than that of polycrystalline silicon/HfO2 structure.

Additional details

Identifiers

DOI
10.1063/1.3152779;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
94
Journal Issue
25
Journal Page Range
p. 252907-252907.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41040219
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CAPACITORS; CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; GOLD; HAFNIUM OXIDES; LEAKAGE CURRENT; PERMITTIVITY; POLYCRYSTALS; SILICON; SILICON OXIDES; SPUTTERING; STRONTIUM COMPOUNDS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; WORK FUNCTIONS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CRYSTALS; CURRENTS; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; FILMS; FUNCTIONS; HAFNIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2009 American Institute of Physics