Published 1987 | Version v1
Book

Severe test of a dangling bond only model of thin film silicon p-i-n solar cell degradation

Creators

  • 1. ARCO Solar, Inc., Chatsworth, CA

Description

This paper uses a model that links previous research into the metastable defects found in undoped thin film Si:H or a-Si:H (TFS) films to the light-induced degradation of TFS solar cells. The fill factor changes of two experimental studies are modeled. The first series is a group of 704, 4-cm2 p-i-n solar cells with eleven different i-layer thicknesses ranging from 1000A to 200,000A. The second series is a group of 144, 4-cm2 p-i-n solar cells all made in the same deposition and then exposed under different illumination levels and temperatures. The dangling bond model is shown to be an incomplete explanation of the fill factor changes due to light soaking. Data for the short time region and long time region cannot both be fit with the same parameters

Additional details

Publishing Information

Publisher
American Institute of Physics.
Imprint Place
New York, NY (USA)
Imprint Title
Stability of amorphous silicon alloy materials and devices
Journal Page Range
p. 243-248.

Conference

Title
International conference on stability of amorphous silicon alloy materials and devices.
Dates
28-30 Jan 1987.
Place
Palo Alto, CA (USA).