Published December 1988 | Version v1
Journal article

To the theory of anisotropy in threshold energy of primary radiation-induced defect formation in crystals

  • 1. Novosibirskij Ehlektrotekhnicheskij Inst., Novosibirsk (USSR)

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
К теории анизотропии пороговой энергии образования первичных радиационных дефектов в кристаллах

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
22
Journal Issue
12
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
2243
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20062274
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANISOTROPY; CRYSTAL DEFECTS; CRYSTALS; ORIENTATION; PHYSICAL RADIATION EFFECTS; SILICON; THRESHOLD ENERGY
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; ENERGY; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
Short note.