Published July 31, 2013 | Version v1
Journal article

Effect of cation non-stoichiometry and crystallinity on the ionic conductivity of atomic layer deposited Y:BaZrO3 films

  • 1. Environmental and Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)
  • 2. Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States)
  • 3. Department of Mechanical Engineering, Hanyang University, Seoul (Korea, Republic of)
  • 4. Department of Mechanical Engineering, Korea University, Seoul (Korea, Republic of)
  • 5. Department of Materials and Science Engineering, Stanford University, Stanford, CA 94305 (United States)

Description

The effects of A-site non-stoichiometry and crystallinity on the proton conductivity of anhydrous proton conducting yttria-doped barium zirconate (BYZ) thin film were investigated. The membranes were fabricated by atomic layer deposition (ALD) as it allows tailoring and varying the concentration of barium. Electrochemical impedance spectroscopy was conducted to investigate the ionic conductivity according to the stoichiometry and crystallinity of the ALD BYZ thin films. - Highlights: • Atomic layer deposition (ALD) of yttrium barium zirconate thin films. • Controlled ALD process for various cation concentrations. • Proton conducting ceramic electrolyte. • Controlling the degree of crystallinity of yttrium doped barium zirconate ALD thin films. • Electrochemical impedance spectroscopy for proton conductivity characterization

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2013.05.092

Additional details

Identifiers

DOI
10.1016/j.tsf.2013.05.092;
PII
S0040-6090(13)00907-3;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
539
Journal Page Range
p. 166-169
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.