Published 2015 | Version v1
Miscellaneous Metadata-only

Radiation effects analysis of CMOS devices in LEO environment

Creators

  • 1. Dept. of Electrical Engineering, COMSATS Inst. of Information Technology (CIIT), Park Road, Islamabad (Pakistan)
  • 2. Skobeltsyn Inst. of Nuclear Physics, Moscow State Univ., Moscow (Russian Federation)
  • 3. Dept. of Electrical Engineering, UFMG Brazil, Belo Horizonte (Brazil)
  • 4. Dept. of Physics, CESET Islamabad, Islamabad (Pakistan)
  • 5. Satellite Research and Development Center SUPARCO, Lahore (Pakistan)

Description

no abstract available

Part of:
Summaries of reports of XLV International Tulinov conference on physics of interactions of charged particles with crystals

Additional details

Additional titles

Original title (English)
Tezisy dokladov XLV mezhdunarodnoj Tulinovskoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami

Publishing Information

Publisher
Universitetskaya kniga
Imprint Place
Moscow (Russian Federation)
Imprint Title
Summaries of reports of XLV International Tulinov conference on physics of interactions of charged particles with crystals
Imprint Pagination
190 p.
Journal Page Range
p. 155
Report number
INIS-RU--607

Conference

Title
45. International Tulinov conference on physics of interactions of charged particles with crystals
Original Conference Title
XLV mezhdunarodnaya Tulinovskaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
26-28 May 2015
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
49086329
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
No Abstract, Conference, Numerical Data
Descriptors DEI
CMOS CIRCUITS; COMPUTERIZED SIMULATION; COSMIC RADIATION; ELECTRIC CONDUCTIVITY; ELECTRON-HOLE DROPLETS; HOLES; MOSFET; PHYSICAL RADIATION EFFECTS; THEORETICAL DATA
Descriptors DEC
DATA; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; FIELD EFFECT TRANSISTORS; INFORMATION; INTEGRATED CIRCUITS; IONIZING RADIATIONS; MICROELECTRONIC CIRCUITS; MOS TRANSISTORS; NUMERICAL DATA; PHYSICAL PROPERTIES; PLASMA; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SIMULATION; SOLID-STATE PLASMA; TRANSISTORS

Optional Information

Notes
Imprint:Tezisy dokladov XLV mezhdunarodnoj Tulinovskoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami