The spin Hall effect in single-crystalline gold thin films
Creators
- 1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)
Description
The spin Hall effect has been investigated in 10-nm-thick epitaxial Au (001) single crystal films via H-pattern devices, whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/25/10/107201Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 25
- Journal Issue
- 10
- Journal Page Range
- [5 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49016689
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DEFECTS; ELECTRIC POTENTIAL; EPITAXY; GEOMETRY; GOLD; HALL EFFECT; MONOCRYSTALS; OPTIMIZATION; SCATTERING; SPIN; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- ANGULAR MOMENTUM; CRYSTAL GROWTH METHODS; CRYSTALS; ELEMENTS; FILMS; MATHEMATICS; METALS; PARTICLE PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENTS