Published May 31, 2007
| Version v1
Journal article
A 913-nm diode-pumped quasi-three-level Nd3+:Gd0.7Y0.3VO4 laser
Creators
- 1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
- 2. Institute of Applied Physics, University of Bern (Switzerland)
Description
Lasing parameters of a mixed Nd3+:Gd0.7Y0.3VO4 vanadate crystal emitting at the 913-nm 4F3/2-4I9/2 laser transition are studied. The output power of up to 600 mW was obtained upon longitudinal diode pumping for the absolute and slope laser efficiencies of ∼13% and ∼17%, respectively. (lasers)
Availability note (English)
Available from http://dx.doi.org/10.1070/QE2007v037n05ABEH013454Additional details
Identifiers
Publishing Information
- Journal Title
- Quantum Electronics (Woodbury, N.Y.)
- Journal Volume
- 37
- Journal Issue
- 5
- Journal Page Range
- p. 440-442
- ISSN
- 1063-7818
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060334
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CRYSTALS; DIODE-PUMPED SOLID STATE LASERS; EFFICIENCY; GADOLINIUM COMPOUNDS; NEODYMIUM IONS; VANADATES
- Descriptors DEC
- CHARGED PARTICLES; IONS; LASERS; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; SOLID STATE LASERS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS