Published February 1992 | Version v1
Journal article Metadata-only

Effect of thermal treatment on recombination of charge carriers in polycrystalline PbTe films

Creators

  • 1. Vil'nyusskij Gosudarstvennyj Univ., Vilnius (Lithuania)

Description

High temperature annealing of polycrystalline thin PbTe films has been studied for its effect on photoconductivity spectrum and fast recombination mechanisms. The spectrum measurements show displacements of the photoconductivity red limit with an increase of annealing temperatures and at 575 K it reaches the value of approximately 70 meV. Comparing the results of spectrum and relaxation investigations the Auger recombination traps is obtained. (author)

Additional details

Additional titles

Original title (Russian)
Влияние термообработки на рекомбинацию носителей заряда в поликристаллических пленках PbTe

Publishing Information

Journal Title
Ukrainskij Fizicheskij Zhurnal
Journal Volume
37
Journal Issue
2
Series
Ukr. Fiz. Zh.
Journal Page Range
266-269
ISSN
0503-1265
CODEN
UFIZA

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
23056359
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; AUGER EFFECT; CHARGE CARRIERS; FILMS; LASER RADIATION; LEAD TELLURIDES; PHOTOCONDUCTIVITY; POLYCRYSTALS; RECOMBINATION; RED SHIFT; RELAXATION TIME; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TIME DEPENDENCE
Descriptors DEC
CHALCOGENIDES; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; HEAT TREATMENTS; LEAD COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE