Published May 1994 | Version v1
Journal article Metadata-only

Photoelectric relaxation spectroscopy of deep levels in CdS single crystals with the given deviations from stoichiometry in the growth process

Creators

Description

By the photoelectric relaxation spectroscopy method are studied deep level properties in CdS high-purity single crystals, which are distinguished each other in the value of deviations from the stoichiometric composition. Parameters are determlined of the most intensively manifested in spectra traps both for electrons and for holes. Technologic conditions for obtaining the single crystals are revealed

Additional details

Additional titles

Original title (Russian)
Фотоэлектрическая релаксационная спектроскопия глубоких уровней в монокристаллах CdS заданными в процессе роста отклонениями от стехиометрии

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
28
Journal Issue
5
Journal Page Range
p. 721-728.
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26040311
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CADMIUM SULFIDES; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; IMPURITIES; MONOCRYSTALS; PARTIAL PRESSURE; SEMICONDUCTOR MATERIALS; STOICHIOMETRY
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; SULFIDES; SULFUR COMPOUNDS; THERMODYNAMIC PROPERTIES