Published February 1, 2011
| Version v1
Journal article
Dislocation cores in silicon: new aspects from numerical simulations
- 1. Department of Physics and Mechanics of Materials, Institut Pprime, CNRS UPR 3346, Universite de Poitiers, SP2MI, BP30179, 86962 Futuroscope Chasseneuil (France)
Description
Recent theoretical investigations of the properties of dislocation cores in silicon are reviewed. New results, obtained from numerical simulations for the non-dissociated screw and 600 dislocations, are presented and discussed in relation with experiments.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/281/1/012002Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 281
- Journal Issue
- 1
- Journal Page Range
- [8 p.]
- ISSN
- 1742-6596
Conference
- Title
- International conference on extended defects in semiconductors
- Acronym
- EDS 2010
- Dates
- 19-24 Sep 2010
- Place
- Brighton (United Kingdom)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43044466
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; DISLOCATIONS; FASTENERS; SILICON
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; LINE DEFECTS; SEMIMETALS; SIMULATION