Published December 2, 1975 | Version v1
Patent Open

Double chamber ion source

Description

The ion source is comprised of two discharge chambers, one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice. 3 claims, 2 drawing figures

Availability note (English)

MF available from INIS under the Report Number.

Files

8282175.pdf

Files (258.3 kB)

Name Size Download all
md5:4cf4e2d9baf5ad06f43d6d1a51e46a02
258.3 kB Preview Download

Additional details

Additional titles

Augmented title (English)
Patent

Publishing Information

Imprint Pagination
6 p.
IPC:
Int. Cl.G01T1/20.
IPC
Int. Cl.G01T1/20.
Patent number
US patent document 3,924,134

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
8282175
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
ELECTRIC DISCHARGES; FILAMENTS; HEAVY IONS; ION IMPLANTATION; ION SOURCES; LIFETIME; PERFORMANCE; RARE GASES
Descriptors DEC
CHARGED PARTICLES; ELEMENTS; IONS; NONMETALS