Published April 24, 2013
| Version v1
Journal article
Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)
- 1. School of Applied Sciences, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)
- 2. School of Physics, University of Sydney, Sydney, New South Wales 2006 (Australia)
Description
ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (∼5 × 1018 cm−3) and a Hall mobility of 8.0 cm2 V−1 s−1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/46/16/165105Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 46
- Journal Issue
- 16
- Journal Page Range
- [5 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44071475
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARRIERS; DEPOSITION; DOPED MATERIALS; FILMS; MAGNETRONS; MOBILITY; OPACITY; PULSES; SAPPHIRE; SCHOTTKY BARRIER DIODES; SENSITIVITY; SPUTTERING; SUBSTRATES; ULTRAVIOLET RADIATION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CORUNDUM; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MINERALS; OPTICAL PROPERTIES; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; ZINC COMPOUNDS